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參數(shù)資料
| 型號(hào)： | NDP4060 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）) |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NDP4060 |
July 1996
NDP4060 / NDB4060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unles otherwise noted
NDP4060
NDB4060
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P
< 50 μs)
± 40
I
D
Drain Current - Continuous
± 15
A
- Pulsed
± 45
P
D
Total Power Dissipation
50
W
Derate above 25
°
C
0.33
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
NDP4060 Rev. C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
15A, 60V. R
DS(ON)
= 0.10
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB4060 | N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）) |
| NDP6030 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP6030PL | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB6030 | N-Channel Enhancement Mode Field Effect Transistor（46A,30V，0.018Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流46A, 漏源電壓30V，導(dǎo)通電阻0.018Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP4060 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDP4060_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP4060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP4060L_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP408 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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