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參數(shù)資料
| 型號： | NDP4060 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強型MOS場效應管（漏電流15A, 漏源電壓60V，導通電阻0.10Ω）) |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 66K |
| 代理商： | NDP4060 |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 15 A
40
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
15
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 60 V, V
GS
= 0 V
60
V
Zero Gate Voltage Drain Current
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
3
4
V
T
J
= 125°C
1.4
2.4
3.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 7.5 A
0.078
0.1
T
J
= 125°C
0.12
0.165
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 7.5 A
15
A
Forward Transconductance
3
5.7
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 1)
Input Capacitance
V
= 25, V
GS
= 0 V,
f = 1.0 MHz
370
450
pF
Output Capacitance
165
200
pF
Reverse Transfer Capacitance
50
100
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 30 V, I
D
= 15 A
V
GS
= 10 V, R
GEN
= 25
8
20
ns
Turn - On Rise Time
70
100
ns
Turn - Off Delay Time
18
30
ns
Turn - Off Fall Time
37
50
ns
Total Gate Charge
V
= 48 V
I
D
= 15 A, V
GS
= 10 V
12.7
17
nC
Gate-Source Charge
3.2
nC
Gate-Drain Charge
7
nC
NDP4060 Rev. C
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| NDP6030 | N-Channel Enhancement Mode Field Effect Transistor |
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| NDB6030 | N-Channel Enhancement Mode Field Effect Transistor（46A,30V，0.018Ω）(N溝道增強型MOS場效應管（漏電流46A, 漏源電壓30V，導通電阻0.018Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDP4060 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDP4060_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP4060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP4060L_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP408 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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