參數(shù)資料
型號(hào)： NDP4050
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor（15A, 50V，0.10Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓50V，導(dǎo)通電阻0.10Ω）)
中文描述： 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 66K
代理商： NDP4050
July 1996
NDP4050 / NDB4050
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP4050
NDB4050
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
50
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P
< 50 μs)
± 40
I
D
Drain Current - Continuous
± 15
A
- Pulsed
± 45
P
D
Total Power Dissipation
50
W
Derate above 25
°
C
0.33
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
NDP4050 Rev. B
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state
resistance,
provide
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
superior
switching
15A, 50V. R
DS(ON)
= 0.10
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDB4050 0 OHM 1% 1/20W SMT (0402) CHIP RES
NDP4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 650V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）)
NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）)
NDP4060 N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）)
NDB4060 N-Channel Enhancement Mode Field Effect Transistor（15A, 60V，0.10Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流15A, 漏源電壓60V，導(dǎo)通電阻0.10Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP4050L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP4060 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP4060 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDP4060_Q 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP4060L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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