參數(shù)資料
型號(hào)： NDH833N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 7100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 6/10頁(yè)
文件大?。?/td> 221K
代理商： NDH833N
NDH833N Rev. C
0
5
10
15
20
25
0
10
20
30
40
50
60
70
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 5.0V
125°C
Figure 16. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics
(continued)
0
0.2
0.4
0.6
0.8
1
4
5
6
7
8
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 4.5V
o
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.03
0.1
0.3
1
3
10
20
40
V , DRAIN-SOURCE VOLTAGE (V)
I
D
DC
1s
10ms
100ms
10s
1ms
RDS(ON) LIMIT
100us
V = 4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 14. SuperSOT
TM
-8 Maximum Steady-State
Power Dissipation versus Copper Mounting Pad
Area.
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
r
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
相關(guān)PDF資料
PDF描述
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
NDH8447 P-Channel Enhancement Mode Field Effect Transistor
NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDH8447 制造商:Fairchild Semiconductor Corporation 功能描述:
NDH8502P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8503N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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