參數(shù)資料
型號(hào)： NDC7002N
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 510 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 258K
代理商： NDC7002N
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 40 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 125°C
500
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.9
2.5
V
T
J
= 125°C
0.8
1.5
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 0.51 A
1
2
T
J
= 125°C
1.7
3.5
V
GS
= 4.5 V, I
D
= 0.35 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 0.51 A
1.6
4
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
On-State Drain Current
1.5
A
Forward Transconductance
400
mS
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
20
pF
13
pF
5
pF
t
D(on)
Turn - On Delay Time
V
DD
= 25 V, I
D
= 0.25 A,
V
GS
= 10 V, R
GEN
= 25
6
20
nS
t
r
t
D(off)
Turn - On Rise Time
6
20
Turn - Off Delay Time
11
20
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
5
20
Total Gate Charge
V
= 25 V,
I
D
= 0.51 A, V
GS
= 10 V
1
nC
Gate-Source Charge
0.19
nC
Gate-Drain Charge
0.33
nC
NDC7002N.SAM
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NDS0610 P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
NDC7002N_Q 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002N_SB9G007 功能描述:MOSFET 50V DUAL N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002N-CUT TAPE 制造商:FAIRCHILD 功能描述:NDC7002N Series Dual N-Channel 50 V 2 Ohm Field Effect Transistor -SS0T-6
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