參數(shù)資料
型號(hào)： NDB6020P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-24A,-20V，0.05Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-24A, 漏源電壓-20V，導(dǎo)通電阻0.05Ω）)
中文描述： 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 62K
代理商： NDB6020P
September 1997
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
NDP6020P
NDB6020P
Units
V
DSS
V
GSS
Drain-Source Voltage
-20
V
Gate-Source Voltage - Continuous
±8
V
I
D
Drain Current
- Continuous
-24
A
- Pulsed
-70
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
60
W
0.4
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
NDP6020P Rev.C1
-24 A, -20 V. R
DS(ON)
= 0.05
@ V
GS
= -4.5 V.
R
DS(ON)
= 0.07
@ V
GS
= -2.7 V.
R
DS(ON)
= 0.075
@ V
GS
= -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
D
S
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDP6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6020 N-Channel Enhancement Mode Field Effect Transistor（35A,20V，0.023Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流35A, 漏源電壓20V，導(dǎo)通電阻0.023Ω）)
NDP6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流52A, 漏源電壓30V，導(dǎo)通電阻0.0135Ω）)
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB603 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6030L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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