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參數(shù)資料
| 型號(hào)： | NCP5314FTR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Two/Three/Four−Phase Buck CPU Controller |
| 中文描述： | SWITCHING CONTROLLER, 1200 kHz SWITCHING FREQ-MAX, PQFP32 |
| 封裝： | LEAD FREE, LQFP-32 |
| 文件頁(yè)數(shù)： | 6/29頁(yè) |
| 文件大?。?/td> | 684K |
| 代理商： | NCP5314FTR2G |
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NCP5314
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS
(0
°
C < T
A
< 70
°
C; V
CC
= 12 V; C
GATEx
= 100 pF, C
COMP
= 0.01
μ
F,
C
SS
= 0.1
μ
F, C
VCC
= 0.1
μ
F, R
ROSC
= 32.4 k
Ω
, V(I
LIM
) = 1.0 V, DAC Code 010100; unless otherwise noted)
Characteristic
Test Conditions
Min
Typ
Max
Unit
VID Inputs
Input Threshold
V
ID5
, V
ID4
, V
ID3
, V
ID2
, V
ID1
, V
ID0
V
ID5
, V
ID4
, V
ID3
, V
ID2
, V
ID1
, V
ID0
= 0 V
SGND < 300 mV, All DAC Codes
400
600
800
mV
VID Pin Current
0.1
1.0
μ
A
μ
A
SGND Bias Current
10
20
40
SGND Voltage Compliance Range
200
300
mV
Power Good
Upper Threshold, Offset from No Load Set Point
85
100
115
mV
Lower Threshold Constant
PWRGDS/No Load Set Point
0.475
0.500
0.525
V/V
Output Low Voltage
V
FFB
= 1.0 V, I
PWRGD
= 4.0 mA
V
FFB
low to PWRGD low
0.15
0.40
V
Delay
50
232
600
μ
s
Overvoltage Protection
OVP Threshold above VID
170
200
250
mV
Enable Input
Start Threshold
Gates switching, SS high
0.6
0.7
0.8
V
Stop Threshold
Gates not switching, SS low
0.4
0.5
0.6
V
Hysteresis
200
mV
Input PullUp Voltage
1.0 M
Ω
to GND
2.7
2.9
3.3
V
Input PullUp Resistance
7.0
10
20
k
Ω
Voltage Feedback Error Amplifier
V
FB
Bias Current
COMP Source Current
0.1
1.0
μ
A
μ
A
μ
A
COMP = 0.5 V to 2.0 V
40
70
100
COMP Sink Current
40
70
100
Transconductance
(Note 2)
1.1
1.3
1.5
mmho
Open Loop DC Gain
(Note 2)
72
80
dB
Unity Gain Bandwidth
C
COMP
= 30 pF (Note 2)
4.0
MHz
PSRR @ 1.0 kHz
(Note 2)
60
dB
COMP Max Voltage
V
FB
= 0 V
V
FB
= 1.6 V
2.4
2.7
V
COMP Min Voltage
50
150
mV
PWM Comparators
Minimum Pulse Width
Measured from CSxP to GATEx,
V
FB
= CSxN = 0.5, COMP = 0.5 V,
60 mV step between CSxP and CSxN;
Measure at GATEx = 1.0 V
40
100
ns
Transient Response Time
Measured from CSxN to GATEx,
COMP = 2.1 V, CSxP = CSxN = 0.5 V,
CSxN stepped from 1.2 V to 2.0 V
40
60
ns
Channel Startup Offset
CSxP = CSxN = V
= 0, Measure
Vcomp when GATEx switch high
0.35
0.62
0.75
V
Artificial Ramp Amplitude
50% duty cycle
100
mV
MOSFET Driver Enable (DRVON)
Output High
DRVON floating
2.3
V
Output Low
0.2
V
PullDown Resistance
DRVON = 1.5 V, ENABLE = 0 V,
R = 1.5 V/I(DRVON)
35
70
140
k
Ω
Source Current
DRVON = 1.5 V
0.5
3.0
6.5
mA
2. Guaranteed by design, not tested in production.
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