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參數(shù)資料
| 型號： | NCN6010DTBR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | SIM Card Supply and Level Shifter |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14 |
| 封裝： | LEAD FREE, TSSOP-14 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 173K |
| 代理商： | NCN6010DTBR2 |
NCN6010
http://onsemi.com
9
Figure 5. Power Down Sequence Oscillogram
Level Shifters
When the SIM card voltage is either higher or lower than
the MPU V
DD
supply, the level shifters can be
reprogrammed to cope with the expected output voltage.
When the MPU and the SIM card operate under the same
supply voltage, the DC/DC converter is not activated
(SIM_VCC = V
DD
–50 mV) and the signals go directly
through the level shifters.
The bi–directional I/O line provides a way to
automatically adapt the voltage difference between the
μ
CU
and the SIM card. In addition with the pull up resistor, an
active pull up circuit (Figure 6 Q1 and Q2) provides a fast
charge of the stray capacitance, yielding a rise time fully
within the ISO/EMV specifications.
Figure 6. Basic I/O Line Interface
GND
V
DD
I/O
20 k
20 k
SIM_IO
V
CC
LOGIC
IO/CONTROL
200 ns
200 ns
GND
Q3
Q1
Q2
The typical waveform provided in Figure 7 shows how the
accelerator operates. During the first 200 ns (typical), the
slope of the rise time is solely a function of the pull up
resistor associated with the stray capacitance. During this
period, the PMOS devices are not activated since the input
voltage is below their Vgs threshold. When the input slope
crosses the Vgsth, the opposite one shot is activated,
providing a low impedance to charge the capacitance, thus
increasing the rise time as depicted in Figure 7. The same
mechanism applies for the opposite side of the line to make
sure the system is optimum.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6010DTBR2G | 功能描述:轉(zhuǎn)換 - 電壓電平 2.7V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN6011/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Power Level Shifter |
| NCN6011DMR2 | 功能描述:IC LEVEL SHIFTER INV LP 10MICRO RoHS:否 類別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類型:CMOS 輸出類型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無/無 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
| NCN6011DTB | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Low Power Level Shifter |
| NCN6011DTBR2 | 功能描述:IC LEVEL SHIFTER INV LP 14TSSOP RoHS:否 類別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類型:CMOS 輸出類型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無/無 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
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