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參數(shù)資料
| 型號(hào)： | NCN6010DTBR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | SIM Card Supply and Level Shifter |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14 |
| 封裝： | LEAD FREE, TSSOP-14 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 173K |
| 代理商： | NCN6010DTBR2 |
NCN6010
http://onsemi.com
5
POWER SUPPLY SECTION
(–25 C to +85 C)
Rating
Symbol
Pin
Min
Typ
Max
Unit
Power Supply
V
DD
1
2.7
–
3.6
V
Standby Supply Current @ No Input Clock, All Input
Logic to H, No Load Connected to the SIM Interface.
I V
DD
1
–
500
–
nA
Ground Current, @ V
DD
= 3.0 V, Operating Conditions:
PWR_ON = 0
SIM_VCC = 5.0 V, I
CC
= 0 mA
SIM_VCC = 5.0 V, I
CC
= 10 mA (Note 2.)
SIM_VCC = 3.0 V, I
CC
= 0 mA
SIM_VCC = 3.0 V, I
CC
= 6.0 mA (Note 2.)
I V
DD
1
–
200
40
5.0
125
25
μ
A
External Card Power Supply at 5.0 V
@ 2.7 V
V
DD
External Card Power Supply at 3.0 V
@ 2.7 V
V
DD
3.6 V, I
CC
= 10 mA
3.6 V, I
CC
= 10 mA
SIM_VCC
14
4.5
V
DD
– 50 mV
V
DD
– 25 mV
5.5
V
DD
V
Output SIM Card Supply Voltage Turn On Time
Ct = 220 nF, Cout1 = 1.0
μ
F
V
DD
= 3.0 V, SIM_VCC = 5.0 V
V
DD
= 3.0 V, SIM_VCC = 3.0 V
20%
VCC
TON
–
0.5
1.0
ms
Output SIM Card Supply Voltage Turn Off Time
Ct = 220 nF, Cout1 = 1.0
μ
F
V
DD
= 2.7 V, SIM_VCC = 5.0 V, @ V
LOW
= 0.4 V
V
DD
= 2.7 V, SIM_VCC = 3.0 V, @ V
LOW
= 0.4 V
20% (Note 3.)
VCC
TOFF
14
–
–
300
300
μ
s
Output Voltage Ripple (Note 4.)
Ct = 220 nF, Cout1 = 1.0
μ
F, Cout2 = 100 nF
V
DD
= 3.0 V, SIM_VCC = 5.0 V, I
CC
= 10 mA
(Not Relevant at SIM_VCC = 3.0 V)
VCC
RIP
14
–
–
200
mV
Input Peak Current During DC/DC Startup
@ V
DD
= 3.0 V, SIM_VCC = 5.0 V
I
DDpk
1
–
300
–
mA
Input Average Current During Normal Operation,
@ V
DD
= 3.0 V, SIM_VCC = 5.0 V
I
DDavg
1
–
20
–
mA
DC/DC Internal Oscillator
Fosc
–
–
800
–
kHz
2. The I
DD
current represents the absolute difference between the current absorbed by the load and the one absorbed by the chip.
3. A 350
μ
s delay must be observed by the external MPU prior to reactivate the SIM_VCC output.
4. Using low ESR capacitors type (max 100 m
) is mandatory for Ct, Cout1 and Cout2 to reach the NCN6010 specifications. Ceramic type
(X5R or X7R) are recommended.
DIGITAL INPUT SECTION CLOCK, RESET, I/O, STOP, MOD_VCC, PWR_ON
Rating
Symbol
Pin
Min
Typ
Max
Unit
High Level Input Voltage
Low Level Input Voltage
Input Rise Time
Input Fall Time
Input Capacitance
V
IH
V
IL
tr
tf
Cin
2, 3
4, 5
6, 7
0.7 * V
DD
–
V
DD
0.3 * V
DD
50
50
10
V
V
ns
ns
pF
Input @ 45% < Duty Cycle < 55%
Clock Rise Time
Clock Fall Time
Input Clock Capacitance
CLOCK
6
–
–
5.0
50
50
10
MHz
ns
ns
pF
Input/Output Data Transfer Frequency
I/O Rise Time
I/O Fall Time
Input I/O Capacitance
I/O
5
–
15
160
0.8
0.8
10
kHz
μ
s
μ
s
pF
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6010DTBR2G | 功能描述:轉(zhuǎn)換 - 電壓電平 2.7V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時(shí)間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN6011/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Power Level Shifter |
| NCN6011DMR2 | 功能描述:IC LEVEL SHIFTER INV LP 10MICRO RoHS:否 類別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類型:CMOS 輸出類型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無/無 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
| NCN6011DTB | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Low Power Level Shifter |
| NCN6011DTBR2 | 功能描述:IC LEVEL SHIFTER INV LP 14TSSOP RoHS:否 類別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類型:CMOS 輸出類型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無/無 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
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