- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361089 > NCN6010DTBR2 (ON SEMICONDUCTOR) SIM Card Supply and Level Shifter PDF資料下載
參數(shù)資料
| 型號： | NCN6010DTBR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | SIM Card Supply and Level Shifter |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14 |
| 封裝： | LEAD FREE, TSSOP-14 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 173K |
| 代理商： | NCN6010DTBR2 |
NCN6010
http://onsemi.com
12
It is clear that, with nearly half an ohm of resistance is
series with the pure capacitor, the tantalum or the electrolytic
type will generate high voltage spikes and poor regulation in
the high frequency operating charge pump built into the
NCN6010. Moreover, with ESR in the 3.0 Ohm range, low
cost capacitors are not suitable for this application.
Figure 11 provides the schematic diagram of the simulated
charge pump circuit. Although this schematic does not
represent the accurate internal structure of the NCN6010, it
can be used for engineering purpose. The ABM devices S1,
S2, S4 and S5 have been defined in the PSPICE model to
represent the NMOS and PMOS used in the silicon. The
ESR value of C2 and C3 can be adjusted, at PSPICE level,
to cope with any type of external capacitors and are useful
to double check the behavior of the system as a function of
the external passives components.
+
+
–
+
–
+
–
+
–
+
–
+
–
S1
U1A
74HC08
1
2
3
U3A
74HC14
1
2
U2A
74HC14
1
2
S2
V1
275 V
V2
V1 = 0
V2 = 3
Transfer Capacitor
S4
+
–
E5
EVALUE
S5
Battery Pack
V3
5.0 V
–
+
+
–
TD = 10 ns
TR = 10 ns
TF = 10 ns
PW = 600 ns
PER = 1200 ns
+
–
+
–
OUT+ IN+
OUT– IN–
R1
0.1 R
C1
4.7
μ
F
IC = 0
S
V
OFF
= 0.0 V
V
ON
= 1.0 V
S
V
OFF
= 2.0 V
V
ON
= 0.0 V
R2
0.1 R
C2
1
μ
F
R4
0.05 R
C3
220 nF
S
V
ON
= 1.0 V
V
OFF
= 0.0 V
S
V
OFF
= 2.0 V
V
ON
= 0.0 V
R3
0.5 R
Figure 11. Charge Pump Simulation Schematic Diagram
if (V (%IN+, %IN–) > 80 mV, 5, 0)
R5
500 R
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NCN6010 | SIM Card Supply and Level Shifter |
| NCN6010D | SIM Card Supply and Level Shifter |
| NCN6010DTB | SIM Card Supply and Level Shifter |
| NCP100(中文) | Sub 1V Precision Adjustable Shunt Regulator(基準(zhǔn)電壓1V的精密可調(diào)旁路穩(wěn)壓器) |
| NCP1012ST65T3 | Self-Supplied Monolithic Switcher for Low Standby- Power Offline SMPS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6010DTBR2G | 功能描述:轉(zhuǎn)換 - 電壓電平 2.7V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN6011/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Power Level Shifter |
| NCN6011DMR2 | 功能描述:IC LEVEL SHIFTER INV LP 10MICRO RoHS:否 類別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類型:CMOS 輸出類型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無/無 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
| NCN6011DTB | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Low Power Level Shifter |
| NCN6011DTBR2 | 功能描述:IC LEVEL SHIFTER INV LP 14TSSOP RoHS:否 類別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類型:CMOS 輸出類型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無/無 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。