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參數(shù)資料
| 型號(hào)： | NCN6010DTBR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 電源管理 |
| 英文描述： | SIM Card Supply and Level Shifter |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14 |
| 封裝： | LEAD FREE, TSSOP-14 |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | NCN6010DTBR2 |
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NCN6010
http://onsemi.com
10
Figure 7. SIM_IO Rise and Fall Time Oscillogram
Input Schmitt Triggers
All the Logic Input pins have built–in Schmitt trigger
circuits to prevent the NCN6010 against uncontrolled
operation. The typical dynamic characteristics of the related
pins are depicted in Figure 8.
The output signal is guaranteed to go High when the input
voltage is above 0.70*Vbat, and will go Low when the input
voltage is below 0.30 * Vbat.
Figure 8. Typical Schmitt Trigger Characteristic
Output
V
bat
ON
OFF
0
b
0
b
V
b
Input
Charge Pump Converter
The converter uses a switched capacitor technique to
increase the SIM_VCC voltage up to 5.0 V from a 3.3 V
typical battery. The concept, depicted in Figure 9, charges
the transfer capacitor C1 up to the Vcc value, then connects
this capacitor is series with the input voltage–output
reservoir network. The voltage developed across the load is,
theoretically, twice the battery voltage, but the system must
takes into account the losses associated with the power
switches and the internal ohmic drops.
S1
S4
S5
C1
B
S3
S2
C2
V
CC
V
O
LOAD
I
S
A
Figure 9. Basic Charge Pump Converter
When the output voltage is programmed to 3.0 V, the
clocks are inactive and the load is directly connected to the
battery by means of switch S5. The SIM_VCC voltage
follows the input value, minus the drop coming from the
internal resistance . The current is limited by the Ron of the
power device S5 and t he output voltage will decrease as the
load current increases above 20 mA (typical). Figure 10
illustrates the theoretical waveforms.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6010DTBR2G | 功能描述:轉(zhuǎn)換 - 電壓電平 2.7V Sim Card Power Supply RoHS:否 制造商:Micrel 類(lèi)型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時(shí)間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN6011/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Low Power Level Shifter |
| NCN6011DMR2 | 功能描述:IC LEVEL SHIFTER INV LP 10MICRO RoHS:否 類(lèi)別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類(lèi)型:CMOS 輸出類(lèi)型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無(wú)/無(wú) 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
| NCN6011DTB | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Low Power Level Shifter |
| NCN6011DTBR2 | 功能描述:IC LEVEL SHIFTER INV LP 14TSSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 邏輯 - 變換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 邏輯功能:變換器，雙向 位數(shù):2 輸入類(lèi)型:CMOS 輸出類(lèi)型:CMOS 數(shù)據(jù)速率:16Mbps 通道數(shù):2 輸出/通道數(shù)目:1 差分 - 輸入:輸出:無(wú)/無(wú) 傳輸延遲（最大）:15ns 電源電壓:1.65 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:10-UFQFN 供應(yīng)商設(shè)備封裝:10-UTQFN（1.4x1.8） 包裝:管件 |
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