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參數(shù)資料
| 型號： | NB3F8L3010CMNR4G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC FANOUT BUFFER 3:10 32QFN |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 類型： | 扇出緩沖器（分配），多路復(fù)用器 |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 3:10 |
| 差分 - 輸入:輸出： | 是/無 |
| 輸入： | HCSL, LVDS, LVPECL, SSTL, 晶體 |
| 輸出： | LVCMOS，LVTTL |
| 頻率 - 最大： | 200MHz |
| 電源電壓： | 2.375 V ~ 3.465 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 32-VFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 32-QFN（5x5） |
| 包裝： | 帶卷 (TR) |
NB3F8L3010C
http://onsemi.com
6
Table 11. AC CHARACTERISTICS VDD = 3.3 V ± 5% (3.135 V to 3.465 V) or VDD = 2.5 V ±5% (2.375 V to 2.625 V) and
VDDOn = 3.3 V ± 5% (3.135 V to 3.465 V) or 2.5 V ± 5% (2.375 V to 2.625 V) or 1.8 V ± 0.2 V (1.6 V to 2.0 V) or 1.5 V ± 0.15 V (1.35 V
to 1.65 V); TA = 40°C to 85°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
fMAX
Output Frequency
Using External
Crystal
10
50
MHz
Using External
Clock Source
(Note 5)
DC
200
MHz
tsk(o)
10
55
ps
tJITTERF
Additive RMS
Phase Jitter
(Integrated
12 kHz *
20 MHz)
(Note 8)
Input clock from
CLK0/CLK0 or
CLK1/CLK1
VDDOn = 3.3 V ± 5%
0.03
ps
VDDOn = 2.5 V ± 5%
0.03
VDDOn = 1.8 V ± 0.2 V
0.03
VDDOn = 1.5 V ± 0.15 V
0.03
External clock
over drives
crystal interface
VDDOn = 3.3 V ± 5%
0.03
VDDOn = 2.5 V ± 5%
0.03
VDDOn = 1.8 V ± 0.2 V
0.03
VDDOn = 1.5 V ± 0.15 V
0.03
Input clock from
crystal
VDDOn = 3.3 V ± 5%
0.03
VDDOn = 2.5 V ± 5%
0.03
VDDOn = 1.8 V ± 0.2 V
0.03
VDDOn = 1.5 V ± 0.15 V
0.03
tR / tF
Output Rise/Fall Time (20% and 80%)
VDDOn = 3.3 V ± 5%
150
350
500
ps
VDDOn = 2.5 V ± 5%
150
350
500
VDDOn = 1.8 V ± 0.2 V
150
350
600
VDDOn = 1.5 V ± 0.15 V
150
350
600
odc
Output Duty Cycle
VDDOn = 3.3 V ± 5%
45
55
%
VDDOn = 2.5 V ± 5%
40
60
VDDOn = 1.8 V ± 0.2 V
40
60
VDDOn = 1.5 V ± 0.15 V
40
60
tEN
Output Enable
Time (Note 9)
OE
4
cycles
tDIS
Output Disable
Time (Note 9)
OE
4
cycles
MUX_ISOLATION
155.52 MHz
55
dB
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. XTAL_IN can be overdriven relative to a signal a crystal would provide.
6. Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDOn/2.
7. This parameter is defined in accordance with JEDEC Standard 65.
8. See phase noise plot.
9. These parameters are guaranteed by characterization. Not tested in production. See Parameter Measurement Information
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