參數(shù)資料
型號(hào): MX29F400TTC-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
中文描述: 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
文件頁(yè)數(shù): 25/44頁(yè)
文件大?。?/td> 710K
代理商: MX29F400TTC-12
25
P/N:PM0439
MX29F400T/B
REV. 1.6, NOV. 12, 2001
All data in chip are erased. External erase verification is
not required because data is erased automatically by
internal control circuit. Erasure completion can be veri-
fied by DATA polling and toggle bit checking after auto-
AUTOMATIC CHIP ERASE TIMING WAVEFORM (WORD MODE)
tCWC
tAS
tCEP
tDS tDH
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A11~A17
tCEPH1
tAH
Q7
Command In
A0~A10
Command In
Command In
Command In
Command In
Command In
tAETC
DATA polling
2AAH
555H
555H
Command #AAH
(Q0~Q7)
Command #55H
Command #80H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
555H
2AAH
555H
Command In
Command In
Command #AAH
Command In
Command In
Command #55H
Command In
Command In
Command #10H
AUTOMATIC CHIP ERASE TIMING WAVEFORM
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
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