參數(shù)資料
型號: MX29F400TTC-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
中文描述: 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
文件頁數(shù): 19/44頁
文件大?。?/td> 710K
代理商: MX29F400TTC-12
19
P/N:PM0439
MX29F400T/B
REV. 1.6, NOV. 12, 2001
READ TIMING WAVEFORMS
Addresses
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
Outputs
tOH
ADD Valid
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less
than 20ns.
2. If VIH is over the specified maximum value, program-
ming operation cannot be guranteed.
3. ICCES is specified with the device de-selected. If
the device is read during erase suspend mode, cur-
rent draw is the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
DC CHARACTERISTICS
TA = 0
o
C to 70
o
C, -40
o
C to 125
o
C, VCC = 5V
±
10%
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP
MAX.
40
50
50
50
UNIT
mA
mA
mA
mA
mA
CONDITIONS
IOUT=0mA, f=5MHz
IOUT=0mA, F=10MHz
In Programming
In Erase
CE=VIH, Erase Suspended
VCC Erase Suspend Current
2
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