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參數(shù)資料
| 型號： | MW6S010GMR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265A-02, TO-270, 2 PIN |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 657K |
| 代理商： | MW6S010GMR1 |
AR
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ARCHIVE
INFORMA
TION
MW6S010MR1 MW6S010GMR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 450 MHz
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
500
400
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Broadband Performance @ Pout = 3 Watts Avg.
21
6
9
12
15
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
18.4
20.4
65
37
34
31
28
40
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
25
60
18
20.2
20
19.8
19.6
19.4
19.2
19
18.8
18.6
410
420
430
440
450
460
470
480
490
ALT1
IRL
f, FREQUENCY (MHz)
Figure 17. 2-Carrier W-CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
ηD
50
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
500
400
14
4
6
8
10
16.5
19
55
50
45
40
30
35
40
45
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
35
12
18.8
18.5
18.3
18
17.8
17.5
17.3
17
16.8
410
420
430
440
450
460
470
480
490
S11
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
650
50
5
30
25
0
5
15
20
S1
1
S21
10
25
20
15
10
100 150 200 250 300 350 400 450 500
S21
550 600
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ALT1
ACPR
Gps
Figure 19. Single-Carrier N-CDMA ACPR, ALT1
and ALT2 versus Output Power
80
Pout, OUTPUT POWER (WATTS) AVG.
10
20
30
40
70
0.1
1
10
50
ACPR
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, NCDMA IS95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
AL
T1
&
AL
T2
,CHANNEL
POWER
(dBc
)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
60
ALT2
ALT1
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| MW6S010GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET |
| MW6S010MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MW6S010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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