參數(shù)資料
型號： MW6S010GMR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1265A-02, TO-270, 2 PIN
文件頁數(shù)： 16/20頁
文件大小： 657K
代理商： MW6S010GMR1
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INFORMA
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MW6S010MR1 MW6S010GMR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 900 MHz
970
16
48
910
26
8
IRL
Gps
IMD
f, FREQUENCY (MHz)
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, 100 kHz Tone Spacing
44
10
40
12
36
14
32
16
28
18
24
20
22
930
950
960
Figure 3. Two-Tone Wideband Performance
@ Pout = 10 Watts
Pout, OUTPUT POWER (WATTS) AVG.
15
20
1
IDQ = 190 mA
VDD = 28 Vdc, f = 945 MHz
Two Tone Measurements
100 kHz Tone Spacing
19
17
16
10
100
Figure 4. Two-Tone Power Gain versus
Output Power
100
70
10
0.1
7th Order
VDD = 28 Vdc, IDQ = 125 mA
f = 945 MHz, Two Tone Measurements
100 kHz Tone Spacing
5th Order
3rd Order
110
20
30
40
50
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
10
55
15
0.1
7th Order
TWO TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, TwoTone Measurements
Center Frequency = 945 MHz
5th Order
3rd Order
20
25
30
35
40
1
100
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
29
48
P3dB = 43.14 dBm (20.61 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 125 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
Center Frequency = 945 MHz
46
44
42
40
38
21
23
25
Actual
Ideal
27
19
Figure 7. Pulse CW Output Power versus
Input Power
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
920
940
18
90 mA
125 mA
P1dB = 42.23 dBm (16.71 W)
50
45
24
0.1
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
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參數(shù)描述
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