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參數(shù)資料
| 型號： | MW6S010NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 725K |
| 代理商： | MW6S010NR1 |
MW6S010NR1 MW6S010GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA,
Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — -37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S010N
Rev. 5, 6/2009
Freescale Semiconductor
Technical Data
MW6S010NR1
MW6S010GNR1
450-1500 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MW6S010NR1
CASE 1265A-03, STYLE 1
TO-270-2 GULL
PLASTIC
MW6S010GNR1
Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
| MW6S-12P | 制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H |
| MW6S-5P | 制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI |
| MW700 | 制造商:Datak Corporation 功能描述: |
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