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參數(shù)資料
| 型號： | MW6S010NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 725K |
| 代理商： | MW6S010NR1 |
MW6S010NR1 MW6S010GNR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 450 MHz
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
500
400
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Broadband Performance @ Pout = 3 Watts Avg.
21
6
9
12
15
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
18.4
20.4
65
37
34
31
28
40
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
25
60
18
20.2
20
19.8
19.6
19.4
19.2
19
18.8
18.6
410
420
430
440
450
460
470
480
490
ALT1
IRL
f, FREQUENCY (MHz)
Figure 17. 2-Carrier W-CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
ηD
50
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
500
400
14
4
6
8
10
16.5
19
55
50
45
40
30
35
40
45
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
35
12
18.8
18.5
18.3
18
17.8
17.5
17.3
17
16.8
410
420
430
440
450
460
470
480
490
S11
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
650
50
5
30
25
0
5
15
20
S1
1
S21
10
25
20
15
10
100 150 200 250 300 350 400 450 500
S21
550 600
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ALT1
ACPR
Gps
Figure 19. Single-Carrier N-CDMA ACPR, ALT1
and ALT2 versus Output Power
80
Pout, OUTPUT POWER (WATTS) AVG.
10
20
30
40
70
0.1
1
10
50
ACPR
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, NCDMA IS95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
AL
T1
&
AL
T2
,CHANNEL
POWER
(dBc
)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
60
ALT2
ALT1
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|---|---|
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