參數(shù)資料
型號: MW6S010NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝: ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN
文件頁數(shù): 11/20頁
文件大小: 725K
代理商: MW6S010NR1
MW6S010NR1 MW6S010GNR1
19
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Dec. 2008
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in
Capable Plastic Package bullet, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional
Test”, On Characteristics table, p. 2
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part
numbers, p. 3, 9
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 13-15. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 16-18. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3
changed from Min-Max .150-.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Added JEDEC Standard Package Number.
Added Product Documentation and Revision History, p. 19
5
June 2009
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 19
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19
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