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參數(shù)資料
| 型號(hào)： | MW6S010NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 725K |
| 代理商： | MW6S010NR1 |
6
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
TYPICAL CHARACTERISTICS — 900 MHz
ACPR
(dBc)
0
60
Pout, OUTPUT POWER (WATTS) AVG.
50
10
40
20
30
20
40
10
50
0.1
1
10
Gps
ACPR
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
Figure 8. Single-Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
100
15
20
0.1
0
50
TC = 30_C
25
_C
30
_C
10
1
19
18
17
16
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
G
ps
,POWER
GAIN
(dB)
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
IDQ = 125 mA
f = 945 MHz
14
15
19
012
17
16
18
46
8
G
ps
,POWER
GAIN
(dB)
0
24
500
25
5
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
20
0
16
5
12
10
8
15
4
20
1200
1100
1000
900
800
700
600
VDD = 28 Vdc
Pout = 10 W CW
IDQ = 125 mA
S1
1(dB)
S21
(dB)
85
_C
25
_C
85
_C
16
10
2
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
VDD = 24 V
28 V
32 V
ηD
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
η
D,
DRAIN
EFFICIENCY
(%)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
| MW6S-12P | 制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H |
| MW6S-5P | 制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI |
| MW700 | 制造商:Datak Corporation 功能描述: |
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