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參數(shù)資料
| 型號： | MW6S010GMR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265A-02, TO-270, 2 PIN |
| 文件頁數(shù)： | 12/20頁 |
| 文件大小： | 657K |
| 代理商： | MW6S010GMR1 |
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RF Device Data
Freescale Semiconductor
MW6S010MR1 MW6S010GMR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A
Machine Model (per EIA/JESD22-A115)
A
Charge Device Model (per JESD22-C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 125 mAdc)
VGS(Q)
—
3.1
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.3 Adc)
VDS(on)
—
0.27
0.35
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
23
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
10
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.32
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz,
Two-Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
17.5
18
20.5
dB
Drain Efficiency
ηD
31
32
—
%
Intermodulation Distortion
IMD
—
-37
-33
dBc
Input Return Loss
IRL
—
-18
-10
dB
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP,
420 MHz<Frequency<470 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
33
—
%
Intermodulation Distortion
IMD
—
-40
—
dBc
Input Return Loss
IRL
—
-10
—
dB
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