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參數(shù)資料
| 型號： | MW6S004NT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, PLD 1.5, CASE 466-03, 4 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 498K |
| 代理商： | MW6S004NT1 |
MW6S004NT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc)
28
16
20
24
1990
1930
IRL
Gps
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ Pout = 2 Watts Avg.
1980
1970
1960
1950
1940
18.4
18.2
35
34
33
32
31
33
η
D
,DRAIN
EFFICIENCY
(%)
ηD
18
17.8
17.6
17.2
16.4
16.8
17.4
32
30
31
12
IM3
Pout, OUTPUT POWER (WATTS) PEP
14
20
1
IDQ = 75 mA
19
17
16
10
20
Figure 4. Two-Tone Power Gain versus
Output Power
10
80
10
0.01
7th Order
VDD = 28 Vdc, IDQ = 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
TwoTone Measurements
5th Order
3rd Order
1
20
30
40
50
60
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
G
ps
,POWER
GAIN
(dB)
10
60
25
0.1
7th Order
TWOTONE SPACING (MHz)
5th Order
3rd Order
30
35
40
45
50
1
100
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
26
47
P3dB = 38.22 dBm (6.637 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 50 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 1960 MHz
43
41
37
35
33
16
18
22
Actual
Ideal
24
14
Figure 7. Pulsed CW Output Power versus
Input Power
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
18
50 mA
62.5 mA
P1dB = 37.61 dBm (5.768 W)
55
0.01
VDD = 28 Vdc, Pout = 2 W (Avg.)
IDQ = 50 mA, 100 kHz Tone Spacing
17
16.6
30
34
8
15
0.1
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
TwoTone Measurements
37.5 mA
25 mA
70
0.1
VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz
45
39
20
P6dB = 38.73 dBm (7.465 W)
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