- 您現(xiàn)在的位置：買賣IC網 > PDF目錄98050 > MW6S004NT1 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MW6S004NT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, PLD 1.5, CASE 466-03, 4 PIN |
| 文件頁數： | 6/13頁 |
| 文件大?。?/td> | 498K |
| 代理商： | MW6S004NT1 |
2
RF Device Data
Freescale Semiconductor
MW6S004NT1
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 mAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 50 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 50 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3
4.2
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 50 mAdc)
VDS(on)
—
0.27
0.37
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
21
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
25
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
30
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two-Tone Test
Power Gain
Gps
16.5
18
20
dB
Drain Efficiency
ηD
28
33
—
%
Intermodulation Distortion
IMD
—
-34
-28
dBc
Input Return Loss
IRL
—
-12
-10
dB
Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP,
f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
33
—
%
Intermodulation Distortion
IMD
—
-39
—
dBc
Input Return Loss
IRL
—
-12
—
dB
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
相關PDF資料 |
PDF描述 |
|---|---|
| MW6S010MR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MW6S010GMR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MW6S010NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MW7IC2425NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MW7IC2425NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MW6S004NT1_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MW6S010 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MW6S010GMR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-2GW RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MW6S010GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。