參數(shù)資料
型號(hào)： MW6S004NT1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, PLD 1.5, CASE 466-03, 4 PIN
文件頁(yè)數(shù)： 4/13頁(yè)
文件大?。?/td> 498K
代理商： MW6S004NT1
12
RF Device Data
Freescale Semiconductor
MW6S004NT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Feb. 2007
Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2
Updated VGS(th) and VGS(Q) to reflect tighter HV6 windows and added Fixture Gate Quiescent VGG(Q) to On
Characteristics table to account for test fixture resistor divider network, p. 2
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
Added Product Documentation and Revision History section, p. 12
3
Apr. 2009
Corrected ESD structures to reflect current testing results. Changed HBM from 1A to 1C and CDM from III
to IV, p. 1
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
4
June 2009
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
相關(guān)PDF資料
PDF描述
MW6S010MR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MW6S010GMR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MW6S010NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MW7IC2425NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MW7IC2425NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MW6S004NT1_07 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MW6S010 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MW6S010GMR1 功能描述:MOSFET RF N-CH 28V 10W TO270-2GW RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MW6S010GNR1 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MW6S010GNR1-CUT TAPE 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET
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