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參數(shù)資料
| 型號(hào)： | MTV25N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 433-01, D3PAK, 3 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 238K |
| 代理商： | MTV25N50E |
MTV25N50E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
25
50
75
100
125
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
600
400
300
200
500
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1.0
10
100
0.1
dc
100
s
1 ms
10 ms
1000
100
ID = 25 A
1.0
0.1
0.001
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
700
800
900
1000
0.1
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