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參數(shù)資料
| 型號： | MTV25N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 433-01, D3PAK, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 238K |
| 代理商： | MTV25N50E |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
TMOS EFET.
Power Field Effect Transistor
D3PAK for Surface Mount
NChannel EnhancementMode Silicon Gate
The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount
components with higher power and lower RDS(on) capabilities. This
high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced TMOS EFET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a drainto
source diode with a fast recovery time. Designed for high voltage,
high speed switching applications in surface mount PWM motor
controls and both acdc and dcdc power supplies. These devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specifically Designed Leadframe for Maximum Power Dissipation
Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GatetoSource Voltage — Continuous
VGS
±20
Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
25
15.8
88
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
250
2.0
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 25 Apk, L = 3.0 mH, RG = 25 )
EAS
938
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
RθJC
RθJA
0.5
62.5
35
°C/W
″ from case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTV25N50E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 43301, Style 2
D3PAK Surface Mount
MTV25N50E
TMOS POWER FET
25 AMPERES
500 VOLTS
RDS(on) = 0.200 OHM
D
S
G
NChannel
Motorola, Inc. 1996
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