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參數(shù)資料
| 型號(hào)： | MTV25N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 433-01, D3PAK, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 238K |
| 代理商： | MTV25N50E |
MTV25N50E
5
Motorola TMOS Power MOSFET Transistor Device Data
V
DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
V
GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
t,TIME
(ns)
0
Qg, TOTAL GATE CHARGE (nC)
25
50
150
1000
100
10
6
0
12
8
2
600
500
200
300
100
0
TJ = 25°C
ID = 25 A
VGS
Q2
Q3
QT
Q1
VDS
75
100
TJ = 25°C
ID = 25 A
VDD = 250 V
VGS = 10 V
tf
td(off)
td(on)
tr
Figure 10. Diode Forward Voltage versus Current
0.54
0.70
0.86
TJ = 25°C
VGS = 0 V
0
20
25
15
0.94
0.78
0.62
10
5.0
4
10
125
400
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal ResistanceGeneral
Data and Its Use.”
Switching between the offstate and the onstate may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10 s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases nonlinearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of drain
tosource avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
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| MTW15N25E | 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTV2-5PH016 | 制造商:ITT Interconnect Solutions 功能描述:Cable Assembly Pre-Wired Pigtail 0.152m 26AWG 5 POS Micro Strip PIN Crimp |
| MTV2-5PH025 | 制造商:ITT Interconnect Solutions 功能描述:MTV2-5PH025 - Bulk |
| MTV2-5PL2 | 制造商:ITT Interconnect Solutions 功能描述:MTV2-5PL2 - Bulk |
| MTV2-5SL1 | 制造商:ITT Interconnect Solutions 功能描述:MTV2-5SL1 - Bulk |
| MTV2-60PH003 | 制造商:ITT Interconnect Solutions 功能描述:CONN UNSHRD HDR PIN 60 POS 2.54MM ST CBL MNT - Bulk |
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