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參數(shù)資料
| 型號： | MTV25N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 433-01, D3PAK, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 238K |
| 代理商： | MTV25N50E |
MTV25N50E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
0.51
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.9
7.0
4.0
—
Vdc
mV/
°C
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 12.5 Adc)
RDS(on)
—
0.19
0.2
Ohm
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 25 Adc)
(VGS = 10 Vdc, ID = 12.5 Adc, TJ = 125°C)
VDS(on)
—
5.4
—
6.0
5.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 12.5 Adc)
gFS
11
17
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
4700
6580
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
520
728
Transfer Capacitance
f = 1.0 MHz)
Crss
—
200
280
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
td(on)
—
37
70
ns
Rise Time
(VDD = 250 Vdc, ID = 25 Adc,
VGS =10Vdc
tr
—
137
280
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
118
240
Fall Time
RG 9.1 )
tf
—
112
230
Gate Charge
(S
Fi
8)
QT
—
132
180
nC
(See Figure 8)
(VDS = 400 Vdc, ID = 25 Adc,
Q1
—
29
—
(VDS
400 Vdc, ID
25 Adc,
VGS = 10 Vdc)
Q2
—
63
—
Q3
—
61
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 25 Adc, VGS = 0 Vdc)
(IS = 25 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.9
0.79
1.1
—
Vdc
Reverse Recovery Time
trr
—
501
—
ns
(IS = 25 Adc, VGS = 0 Vdc,
ta
—
332
—
(IS
25 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
—
170
—
Reverse Recovery Stored Charge
QRR
—
9.42
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
5.0
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTV2-5PH016 | 制造商:ITT Interconnect Solutions 功能描述:Cable Assembly Pre-Wired Pigtail 0.152m 26AWG 5 POS Micro Strip PIN Crimp |
| MTV2-5PH025 | 制造商:ITT Interconnect Solutions 功能描述:MTV2-5PH025 - Bulk |
| MTV2-5PL2 | 制造商:ITT Interconnect Solutions 功能描述:MTV2-5PL2 - Bulk |
| MTV2-5SL1 | 制造商:ITT Interconnect Solutions 功能描述:MTV2-5SL1 - Bulk |
| MTV2-60PH003 | 制造商:ITT Interconnect Solutions 功能描述:CONN UNSHRD HDR PIN 60 POS 2.54MM ST CBL MNT - Bulk |
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