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參數(shù)資料
| 型號(hào)： | MTP4N40E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | MTP4N40E |
MTP4N40E
5
Motorola TMOS Power MOSFET Transistor Device Data
DRAINTOSOURCE DIODE CHARACTERISTICS
0.55
0.6
0.7
0.8
0.9
0.5
0
0.8
2
2.4
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
10
t,TIME
(ns)
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25°C
Figure 10. Diode Forward Voltage versus Current
500
V GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
450
400
350
300
250
200
0
9
7
4
0
QG, TOTAL GATE CHARGE (nC)
VDS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
10
8
2
12
3
4
9
TJ = 25°C
ID = 4 A
VDS
VGS
5
0
Q1
Q2
QT
Q3
100
0.4
1.2
0.65
0.75
0.85
VDD = 200 V
ID = 4 A
VGS = 10 V
TJ = 25°C
67
8
6
5
3
1
150
100
50
1
1.6
11
12
10 11 12 13 14 15
550
600
2.8
3.2
3.6
4
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal ResistanceGeneral
Data and Its Use.”
Switching between the offstate and the onstate may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10 s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases nonlinearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of drain
tosource avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP4N45 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| MTP4N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| MTP4N50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS |
| MTP4N80 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP4N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
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