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參數(shù)資料
| 型號： | MTP4N40E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | MTP4N40E |
MTP4N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
420
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
6.0
4.0
—
Vdc
mV/
°C
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
—
1.3
1.8
Ohms
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 4.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc, TJ = 125°C)
VDS(on)
—
8.6
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
gFS
1.8
2.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
440
616
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
72
100
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
14
19.6
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
td(on)
—
9.0
20
ns
Rise Time
(VDD = 200 Vdc, ID = 4.0 Adc,
VGS =10Vdc
tr
—
11
30
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
18
30
Fall Time
RG
9.1
)
tf
—
14
30
Gate Charge
QT
—
13
21
nC
(VDS = 320 Vdc, ID = 4.0 Adc,
Q1
—
2.5
—
(VDS
320 Vdc, ID
4.0 Adc,
VGS = 10 Vdc)
Q2
—
6.0
—
Q3
—
7.0
—
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.9
0.78
1.6
—
Vdc
Reverse Recovery Time
trr
—
200
—
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
ta
—
99
—
(IS
4.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
—
101
—
Reverse Recovery Stored Charge
QRR
—
1.03
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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| MTP4N45 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 4.5 A, 450V/500V |
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| MTP4N80 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP4N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
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