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參數(shù)資料
| 型號(hào)： | MTP50N03HDL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 71K |
| 代理商： | MTP50N03HDL |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MTP50P03HDL/D
MTP50P03HDL
Preferred Device
Power MOSFET
50 Amps, 30 Volts, Logic Level
P–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
30
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
50
31
150
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
125
1.0
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 50 Apk, L = 1.0 mH, RG = 25 )
EAS
1250
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient, when mounted
with the minimum recommended pad size
R
θJC
R
θJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
D
S
G
P–Channel
50 AMPERES
30 VOLTS
RDS(on) = 25 m
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP50N03HDL
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP50N03HDL
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP50N03HDL
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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