- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96097 > MTP50N03HDL (ON SEMICONDUCTOR) 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MTP50N03HDL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | MTP50N03HDL |
MTP50P03HDL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
0
20
60
100
80
40
4.5 V
TJ = 25°C
5 V
0
20
40
80
100
60
1.5
1.9
2.3
2.7
3.5
4.3
3.1
3.9
VDS ≥ 10 V
100°C
25°C
TJ = -55°C
0.015
0.017
0.021
0.025
0.029
0.027
0.023
0.019
0
2040
6080
100
VGS = 5.0 V
TJ = 100°C
-55°C
25°C
0
2040
6080
100
0.016
0.018
0.020
0.022
0.021
0.019
0.017
0.015
TJ = 25°C
10 V
VGS = 5 V
-50
-25
0
25
50
75
100
125
150
0.85
1.05
1.35
0.95
1.25
VGS = 10 V
8 V
6 V
VGS = 5 V
ID = 25 A
4 V
3.5 V
3 V
2.5 V
1.15
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
0
5
10
20
25
30
100
1000
15
VGS = 0 V
TJ = 125°C
100°C
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP50N06EU | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP50N06EN | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP50N06E16 | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP10N10EWC | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP10N10EUA | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP50N05E | 制造商:Motorola Inc 功能描述: 制造商:Texas Instruments 功能描述: |
| MTP50N05EW | 制造商:Motorola Inc 功能描述:50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP50N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
| MTP50N06EL | 制造商:ON Semiconductor 功能描述: |
| MTP50N06V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。