參數(shù)資料
型號(hào): MTP4N40E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-06, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 199K
代理商: MTP4N40E
MTP4N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
04
8
12
16
20
0
3
5
6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
01
2
4
0
0.5
1.5
2.5
3.5
01
4
6
0.5
1
1.5
2
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
0.5
1.25
2.0
100
200
300
400
1
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 100°C
25°C
55°C
TJ = 25°C
VGS = 10 V
2
4
2
6
10
14
18
1
9 V
5 V
6 V
7 V
8 V
VGS = 10 V
0
3
5
6
2
4
1
2
345
67
8
9
3
2
1
35
6
2.25
1.75
1.25
0.75
23
5
0.75
2.5
150
250
350
VGS = 10 V
15 V
VGS = 10 V
ID = 2 A
0.25
1.5
2.25
1.0
1.75
50
0
VGS = 0 V
TJ = 125°C
100°C
7
8
7
8
2.5
3.5
4.5
5.5
6.5
7.5
8.5
4
78
7
0.5
1.5
4.5
6.5
2.5
3.5
5.5
7.5
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