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參數(shù)資料
| 型號： | MTB52N06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 52 AMPERES 60 VOLTS |
| 中文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 198K |
| 代理商： | MTB52N06V |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
150
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
P
Figure 15. D2PAK Power Derating Curve
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
10
1000
1
0
450
250
150
350
100
10
μ
s
100
μ
s
1 ms
10 ms
dc
50
ID = 52 A
175
175
400
200
100
300
t, TIME (s)
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB52N06VL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB52N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK T/R |
| MTB52N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK T/R |
| MTB55N03N3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:30V N-Channel Logic Level Enhancement Mode MOSFET |
| MTB55N06Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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