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參數(shù)資料
| 型號： | MTB52N06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 52 AMPERES 60 VOLTS |
| 中文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 198K |
| 代理商： | MTB52N06V |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
100
80
70
60
40
30
20
10
0
2
0
7.5
7
5
3
2.5
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
VGS = 10 V
0.035
20
0
0.03
0
40
60
80
100
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
0.023
0.015
5
VGS = 10 V
15 V
VGS = 10 V
ID = 26 A
1.75
1.5
1
0.5
0.25
–50
–25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125
°
C
1
0
10
20
30
40
50
60
4
6
8
10
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
0.02
0.015
0.01
0.021
0.019
0.017
25
45
65
85
105
100
10
100
°
C
175
2
110
90
50
1
3
5
7
9
110
3.5
4.5
5.5
6.5
0.025
0.005
30
10
50
70
90
110
0.022
0.020
0.018
0.016
15
35
55
75
95
1.25
0.75
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| MTB52N06VL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MTB55N03N3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:30V N-Channel Logic Level Enhancement Mode MOSFET |
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