參數(shù)資料
型號(hào): MT9LD272AG
廠商: Micron Technology, Inc.
英文描述: 2Meg x 72 Nonbuffered DRAM DIMMs(2M x 72無緩沖動(dòng)態(tài)RAM雙列直插存儲(chǔ)器模塊)
中文描述: 2Meg × 72 Nonbuffered內(nèi)存插槽(200萬× 72無緩沖動(dòng)態(tài)RAM的雙列直插存儲(chǔ)器模塊)
文件頁數(shù): 13/30頁
文件大?。?/td> 410K
代理商: MT9LD272AG
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
13
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
OBSOLETE
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (V
DD
= +3.3V
±
0.3V)
AC CHARACTERISTICS - EDO PAGE MODE OPTION
PARAMETER
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE# (CAS# HIGH)
WRITE command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
RPC
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WHZ
t
WP
t
WPZ
t
WRH
t
WRP
MIN
5
0
13
116
67
13
2
8
38
0
0
5
10
8
8
MAX
MIN
5
0
15
140
79
15
2
10
45
0
0
5
10
10
10
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
18
23
50
50
23
12
15
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相關(guān)代理商/技術(shù)參數(shù)
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MT9LD272AG-52B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 Burst EDO Page Mode DRAM Module
MT9LD272AG-5X 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module
MT9LD272AG-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 Fast Page Mode DRAM Module
MT9LD272AG-60B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 Burst EDO Page Mode DRAM Module
MT9LD272AG-6X 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2, 4 MEG x 72 NONBUFFERED DRAM DIMMs