參數(shù)資料
型號: MT54V512H18E
廠商: Micron Technology, Inc.
英文描述: 512K x 18 Synchronous Pipelined Burst SRAM(9Mb,流水線式,同步脈沖靜態(tài)存儲器)
中文描述: 為512k × 18同步流水線突發(fā)靜態(tài)存儲器(9Mb以上,流水線式,同步脈沖靜態(tài)存儲器)
文件頁數(shù): 7/22頁
文件大?。?/td> 260K
代理商: MT54V512H18E
7
512K x 18 2.5V V
DD
, HSTL, QDRb4 SRAM
MT54V512H18E.p65 – Rev. 3/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
512K x 18
2.5V V
DD
, HSTL, QDRb4 SRAM
PIN DESCRIPTIONS (continued)
PINS (x18)
2A, 10A,
4C, 8C,
4D-8D,
5E-7E, 6F,
6G, 6H, 6J,
6K, 5L-7L,
4M-8M,
4N, 8N
3A, 7A,
9A, 1B, 5B,
9B, 10B,
1C, 2C, 6C,
9C, 1D, 9D,
10D, 1E,
2E, 9E, 1F,
9F, 10F,
1G, 9G,
10G, 1H, 1J,
2J, 9J, 1K,
2K, 9K, 1L,
9L, 10L,
1M, 2M,
9M, 1N,
9N, 10N,
1P, 2P, 9P
SYMBOL
V
SS
TYPE
Supply
DESCRIPTION
Power Supply: GND.
NC
No Connect: These signals are not internally connected and may be
connected to ground to improve package heat dissipation.
相關(guān)PDF資料
PDF描述
MT55L1MY18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器)
MT55V1MV18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器)
MT55L512L18F 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256L32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256L36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT54V512H18E1F-5 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT54V512H18EF-10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT54V512H18EF-6 制造商:Cypress Semiconductor 功能描述:DS2KX18 SRAM PLASTIC FBGA 2.5V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT54V512H18EF-6C 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT54V512H36EF-5 制造商:Rochester Electronics LLC 功能描述:- Bulk