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參數(shù)資料
| 型號： | MT54V512H18E |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲器) |
| 中文描述： | 為512k × 18同步流水線突發(fā)靜態(tài)存儲器（9Mb以上，流水線式，同步脈沖靜態(tài)存儲器） |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 260K |
| 代理商： | MT54V512H18E |
10
512K x 18 2.5V V
DD
, HSTL, QDRb4 SRAM
MT54V512H18E.p65 – Rev. 3/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
512K x 18
2.5V V
DD
, HSTL, QDRb4 SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
.................................. -0.5V to +3.6V
Voltage on V
DD
Q Supply
Relative to V
SS
..................................... -0.5V to V
DD
V
IN
................................................. -0.5V to V
DD
+ 0.5V
Storage Temperature .......................... -55°C to +125°C
Junction Temperature**.................................... +125°C
Short Circuit Output Current ........................... ±70mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
** Junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow. See
Micron Technical Note TN-05-14 for more information.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
￡
T
J
￡
+110°C; +2.4V
￡
V
DD
￡
+2.6V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Clock Input Signal Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
V
IN
IL
I
IL
O
MIN
MAX
UNITS NOTES
V
V
V
μA
μA
V
REF
+ 0.1
-0.3
-0.3
-5
-5
V
DD
Q + 0.3
V
REF
- 0.1
V
DD
Q + 0.3
5
5
3, 4
3, 4
3, 4
0V
￡
V
IN
￡
V
DD
Q
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q (Q)
|
OH
|
￡
0.1mA
Note 1
I
OL
￡
0.1mA
Note 2
Output High Voltage
V
OH
(
LOW
)
V
OH
V
OL
(
LOW
)
V
OL
V
DD
V
DD
Q
V
REF
V
DD
Q - 0.2
V
DD
Q/2 - 0.08 V
DD
Q/2 + 0.08
V
SS
V
DD
Q/2 - 0.08 V
DD
Q/2 + 0.08
2.4
1.4
0.68
V
DD
Q
V
V
V
V
V
V
V
3, 5, 7
3, 5, 7
3, 5, 7
3, 5, 7
3
3, 6
3
Output Low Voltage
0.2
Supply Voltage
Isolated Output Buffer Supply
Reference Voltage
2.6
1.6
0.9
NOTE:
1. Outputs are impedance-controlled. |I
OH
|= (V
DD
Q/2)/(RQ/5) for values of 175
W
￡
RQ
￡
350
W
.
2. Outputs are impedance-controlled. I
OL
= (V
DD
Q/2)/(RQ/5) for values of 175
W
￡
RQ
￡
350
W
.
3. All voltages referenced to V
SS
(GND).
4. Overshoot:
V
IH
(AC)
￡
V
DD
+ 0.7V for t
￡
t
KHKH/2
Undershoot:
V
IL
(AC)
3
-0.5V for t
￡
t
KHKH/2
Power-up:
V
IH
￡
V
DD
Q + 0.3V and V
DD
￡
2.4V and V
DD
Q
￡
1.4V for t
￡
200ms
During normal operation, V
DD
Q must not exceed V
DD
. R#, W#, and address signals may not have pulse widths less than
t
KHKL (MIN) or operate at cycle rates less than
t
KHKH (MIN).
5. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
6. For higher V
DD
Q voltages, contact factory for product information.
7. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
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|---|---|
| MT54V512H18E1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT54V512H18EF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT54V512H18EF-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX18 SRAM PLASTIC FBGA 2.5V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT54V512H18EF-6C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT54V512H36EF-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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