- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385640 > MT54V512H18A (Micron Technology, Inc.) 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號： | MT54V512H18A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器) |
| 中文描述： | 為512k × 18同步流水線突發(fā)靜態(tài)存儲(chǔ)器（9Mb以上，流水線式，同步脈沖靜態(tài)存儲(chǔ)器） |
| 文件頁數(shù)： | 19/22頁 |
| 文件大?。?/td> | 258K |
| 代理商： | MT54V512H18A |
19
512K x 18 2.5V V
DD
, HSTL, QDRb2 SRAM
MT54V512H18A.p65 – Rev. 3/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
512K x 18
2.5V V
DD
, HSTL, QDRb2 SRAM
TAP AC TEST CONDITIONS
Input pulse levels...................................... V
SS
to 2.5V
Input rise and fall times ....................................... 1ns
Input timing reference levels ...........................1.25V
Output reference levels ....................................1.25V
Test load termination supply voltage ..............1.25V
TDO
1.25V
20pF
Z = 50
50
Figure 4
Tap AC Output Load Equivalent
TAP DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
￡
T
J
￡
+110°C, +2.4V
￡
V
DD
￡
+2.6V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
MIN
1.7
-0.3
-5.0
-5.0
MAX
V
DD
+ 0.3
0.7
5.0
5.0
UNITS
V
V
μA
μA
NOTES
1, 2
1, 2
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q
I
OLC
= 100μA
I
OLT
= 2mA
|
OHC
|= 100μA
|
OHT
|= 2mA
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
V
OL
1
V
OL
2
V
OH
1
V
OH
2
0.2
0.7
V
V
V
V
1
1
1
1
2.1
1.7
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
During normal operation, V
DD
Q must not exceed V
DD
. Control input signals (such as LD#, R/W#, etc.) may not have
pulse widths less than
t
KHKL (MIN) or operate at frequencies exceeding
f
KF (MAX).
V
IH
(AC)
￡
V
DD
+ 0.7V for t
￡
t
KHKH/2
V
IL
(AC)
3
-0.5V for t
￡
t
KHKH/2
V
IH
￡
+2.6V and V
DD
￡
2.4V and V
DD
Q
￡
1.4V for t
￡
200ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT54V512H18E | 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器) |
| MT55L1MY18P | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55V1MV18P | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT54V512H18AF-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 2.5V 9M-Bit 512K x 18 3ns 165-Pin FBGA |
| MT54V512H18AF-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Trays |
| MT54V512H18E1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT54V512H18EF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT54V512H18EF-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX18 SRAM PLASTIC FBGA 2.5V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。