參數(shù)資料
型號(hào): MT4LDT464AG
廠商: Micron Technology, Inc.
英文描述: 4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64無緩沖動(dòng)態(tài)RAM雙列直插存儲(chǔ)器模塊)
中文描述: 4梅格× 64 Nonbuffered內(nèi)存插槽(4個(gè)M × 64無緩沖動(dòng)態(tài)RAM的雙列直插存儲(chǔ)器模塊)
文件頁數(shù): 9/31頁
文件大?。?/td> 439K
代理商: MT4LDT464AG
1, 2, 4 Meg x 64 Nonbuffered DRAM DIMMs
DM67.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
9
1, 2, 4 MEG x 64
NONBUFFERED DRAM DIMMs
OBSOLETE
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 5, 6) (V
DD
= +3.3V
±
0.3V)
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
SYMBOL
SIZE
8MB
16MB
32MB
8MB
16MB
32MB
8MB
16MB
32MB
8MB
16MB
32MB
8MB
16MB
32MB
8MB
16MB
32MB
8MB
16MB
32MB
-5*
4
8
16
2
8
8
720
880
1,760
560
880
1,760
720
880
1,760
720
880
1,760
-6
4
8
16
2
8
8
680
800
1,600
360
640
1,280
520
800
1,600
680
800
1,600
680
800
1,600
UNITS
NOTES
I
CC
1
mA
STANDBY CURRENT: CMOS
(RAS# = CAS# = V
DD
- 0.2V)
I
CC
2
mA
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: FAST PAGE MODE
Average power supply current
(RAS# = V
IL
, CAS#, address cycling:
t
PC =
t
PC [MIN])
OPERATING CURRENT: EDO PAGE MODE (“X” version only)
Average power supply current
(RAS# = V
IL
, CAS#, address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
3, 24
I
CC
3
mA
3, 24
I
CC
4
mA
I
CC
5
3, 24
(X only)
mA
3, 24
I
CC
6
mA
3, 4
I
CC
7
mA
* EDO version only
CAPACITANCE
PARAMETER
Input Capacitance: A0-A10
Input Capacitance: WE0#, WE2#, OE0#, OE2#, RAS0#, RAS2#
Input Capacitance: CAS0#-CAS7#
Input Capacitance: SCL, SA0-SA2
Input/Output Capacitance: DQ0-DQ63, SDA
SYMBOL
C
I
1
C
I
2
C
I
3
C
I
4
C
IO
8MB
26
18
10
6
10
16MB
48
34
10
6
10
32MB
90
64
18
6
10
UNITS
pF
pF
pF
pF
pF
NOTES
2
2
2
2
2
MAX
MAX
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