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Micron Technology, Inc., reserves the right to change products or specifications without notice.
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
73
2003 Micron Technology, Inc. All rights reserved.
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
IEEE 1149.1 Serial Boundary Scan (JTAG)
Notes:
1. All voltages referenced to VSS (GND).
2. Overshoot = VIH(AC)
≤ VDD + 0.7V for t ≤ tCK/2; undershoot = VIL(AC) ≥ –0.5V for t ≤ tCK/2;
during normal operation, VDDQ must not exceed VDD.
Table 25:
TAP DC Electrical Characteristics and Operating Conditions
+0°C
≤ T
C ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted
Description
Condition
Symbol
Min
Max
Units
Notes
Input high (logic 1) voltage
VIH
VREF + 0.15
VDD + 0.3
V
Input low (logic 0) voltage
VIL
VSSQ - 0.3
VREF - 0.15
V
Input leakage current
0V
≤ VIN ≤ VDD
ILI
–5.0
5.0
A
Output leakage current
Output disabled,
0V
≤ VIN ≤ VDDQ
ILO
–5.0
5.0
A
Output low voltage
IOLC = 100A
VOL10.2
V
Output low voltage
IOLT = 2mA
VOL20.4
V
Output high voltage
|IOHC| = 100A
VOH1VDDQ - 0.2
V
Output high voltage
|IOHT| = 2mA
VOH2VDDQ - 0.4
V
Table 26:
Identification Register Definitions
Instruction Field
All Devices
Description
Revision number (31:28)
abcd
ab = die revision
cd = 00 for x9, 01 for x18, 10 for x36
Device ID (27:12)
00jkidef10100111
def = 000 for 288Mb, 001 for 576Mb
i = 0 for common I/O, 1 for separate I/O
jk = 01 for RLDRAM II, 00 for RLDRAM
Micron JEDEC ID code (11:1)
00000101100
Allows unique identification of RLDRAM vendor
ID register presence indicator (0)
1
Indicates the presence of an ID register
Table 27:
Scan Register Sizes
Register Name
Bit Size
Instruction
8
Bypass
1
ID
32
Boundary scan
113