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參數(shù)資料
| 型號(hào)： | MT49H8M36HU-33 |
| 元件分類： | DRAM |
| 英文描述： | 8M X 36 DDR DRAM, 0.3 ns, PBGA144 |
| 封裝： | FBGA-144 |
| 文件頁數(shù)： | 26/76頁 |
| 文件大?。?/td> | 2659K |
| 代理商： | MT49H8M36HU-33 |
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PDF: 09005aef80a41b59/Source: 09005aef809f284b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
31
2003 Micron Technology, Inc. All rights reserved.
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
Commands
MODE REGISTER SET (MRS)
The mode register set stores the data for controlling the operating modes of the memory.
It programs the RLDRAM configuration, burst length, test mode, and I/O options.
During an MRS command, the address inputs A0–A17 are sampled and stored in the
mode register. After issuing a valid MRS command, tMRSC must be met before any
command can be issued to the RLDRAM. This statement does not apply to the consecu-
tive MRS commands needed for internal logic reset during the initialization routine. The
MRS command can only be issued when all banks are idle and no bursts are in progress.
Note:
The data written by the prior burst length is not guaranteed to be accurate when the
burst length of the device is changed.
DON’T CARE
CK
CK#
CS#
WE#
REF#
OPCODE
ADDRESS
BANK
ADDRESS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT49H8M36HU-33 IT | 制造商:Micron Technology Inc 功能描述: |
| MT49H8M36HU-5 | 制造商:Micron Technology Inc 功能描述: |
| MT4A5 | 制造商:EDAL 制造商全稱:EDAL 功能描述:SILICON FAST RECOVERY 3.0 AMP DIODES |
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