參數(shù)資料
型號: MT49H8M32FM
廠商: Micron Technology, Inc.
英文描述: REDUCED LATENCY DRAM RLDRAM
中文描述: 低延遲DRAM延遲DRAM
文件頁數(shù): 6/43頁
文件大?。?/td> 652K
代理商: MT49H8M32FM
6
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
BALL DESCRIPTIONS
T-FBGA (x32)
12J, 12K
2L
1J
1K
2K
11J, 11K, 2J
12G, 11G, 10G, 12G, 11G, 10G,
12H, 11H, 1G,
2G, 3G, 1H,
2H, 12M, 11M, 2H, 12M, 11M,
10M, 12L, 11L, 10M, 12L, 11L,
1M, 2M, 3M, 1L 1M, 2M, 3M,
T-FBGA (x16)
12J, 12K
2L
1J
1K
2K
11J, 11K, 2J
SYMBOL
CK, CK#
CS#
AS#
WE#
REF#
B[0:2]
A[0:18]
A[0:19]
TYPE
Input
Input
Input
Input
Input
Input
Input
DESCRIPTION
Differential input clock pair
Chip select
Address strobe
Write enable
Auto refresh
Bank select
Address input
12H, 11H, 1G,
2G, 3G, 1H,
12N, 1L
1F, 1N
11A
12V
1F, 1N
11A
12V
DM0, DM1
TMS
TDI
Input
Input
Data Mask
IEEE 1149.1 Test Inputs: JEDEC-standard 1.8V I/O levels.
These pins may be left Not Connected if the JTAG
function is not used in the circuit.
IEEE 1149.1 Clock Input: JEDEC-standard 1.8V I/O levels.
This pin must be tied to V
SS
if the JTAG function is not
used in the circuit.
Input Reference Voltage: Nominally V
DD
Q/2. Provides a
reference voltage for the input buffers.
Synchronous Data I/Os: Input data must meet setup and
hold times around the rising edges of CK and CK#.
Output data is synchronized to DQS and DQS#.
12A
12A
TCK
Input
3A, 3V
3A, 3V
V
REF
Input
11B, 10B, 11C, 11B, 10B, 11C,
10C, 11E, 10E,
11F, 10F, 2B,
3B, 2C, 3C, 2E, 10U, 11T, 10T,
3E, 2F, 3F, 2U,
3U, 2T, 3T, 2P,
3P, 2N, 3N,
11U, 10U, 11T,
10T, 11P, 10P,
11N, 10N
11D, 2D, 2R,
11R, 10D, 3D,
3R, 10R
DQ0–DQ31
Input/
Output
10C, 11E, 10E,
11F, 10F, 11U,
11P, 10P, 11N,
10N
11D, 11R,
10D, 10R
DQS0–3 (x32) Output
DQS#0–3 (x32)
DQS0–1 (x16)
DQS#0–1 (x16)
DVLD
TDO
V
EXT
Differential data read strobe
12F
11V
2A, 2V,
10A, 10V
3J, 3K, 4G,
4J, 4K, 4M,
9G, 9J, 9K,
9M, 10J, 10K
12F
11V
2A, 2V,
10A, 10V
3J, 3K, 4G,
4J, 4K, 4M,
9G, 9J, 9K,
9M, 10J, 10K
Output
Output
Supply
Data Valid
IEEE 1149.1 Test Output: JEDEC-standard 1.8V I/O level.
Power Supply: 2.5V nominal. See DC Electrical
Characteristics and Operating Condidtions for range.
Power Supply: 1.8V nominal. See DC Electrical
Characteristics and Operating Conditions for range.
V
DD
Supply
(continued on next page)
相關(guān)PDF資料
PDF描述
MT4C1M16E5DJ-6 EDO DRAM
MT4LC1M16E5DJ-6S EDO DRAM
MT4LC1M16E5 EDO DRAM
MT4C4256 256K x 4 DRAM Standard Or Low Power, Extended Refresh(標(biāo)準(zhǔn)或低功率,擴展刷新,256K x 4動態(tài)RAM)
MT4C4256L 256K x 4 DRAM Standard Or Low Power, Extended Refresh(標(biāo)準(zhǔn)或低功率,擴展刷新,256K x 4動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT49H8M32FM-33 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays
MT49H8M32FM-33 TR 制造商:Micron Technology Inc 功能描述:8MX32 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel
MT49H8M32FM-4 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays
MT49H8M32FM-4 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays
MT49H8M32FM-5 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays