參數(shù)資料
型號(hào): MT49H8M32FM
廠商: Micron Technology, Inc.
英文描述: REDUCED LATENCY DRAM RLDRAM
中文描述: 低延遲DRAM延遲DRAM
文件頁(yè)數(shù): 23/43頁(yè)
文件大?。?/td> 652K
代理商: MT49H8M32FM
23
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
GENERAL OVERVIEW AND TIMING DEFINITION
(BL2/WL2)
NOTE:
1. Address A[19:0] and commands CS#, AS#, WE#, REF# are referenced to the rising edge of the clock CK.
2. Input Data DQ is referenced to the rising or falling edge of the clock.
3. DVLD is referenced to the falling edge of DQS.
CK/CK#
DQS[3:0]#
DQS[3:0]
DVLD
A[19:0]
BA[2:0]
DM[1:0]
WE#
CS#, AS#,
REF#
DQ
1
2
3
4
5
6
7
8
9
tCKH
tCS
tCH
tCKL
tCK
tAS
tAH
tCKDQS
tQSVLD
tQSVLD
tQSQH Z
tQSQ
tDH
tDS
Q0a
Q0b
Q1a
Q1b
D0a
D0b
D1a
D1b
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