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| 型號： | MT48V16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動SDRAM |
| 文件頁數(shù)： | 7/58頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48V16M16LFFG |
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7
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
14
10
M3 = 0
1
2
4
8
Reserved
Reserved
Reserved
Full Page
M3 = 1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
Operating Mode
Standard Operation
All other states reserved
0
-
0
-
Defined
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
1
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
Burst Length
CAS Latency
BT
A9
A7
A6
A5
A4
A3
A8
A2
A1
A0
Mode Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
0
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
M6-M0
M8
M7
Op Mode
A10
A11
11
Reserved*
WB
0
1
Write Burst Mode
Programmed Burst Length
Single Location Access
M9
*Should program
M12, M11, M10 = 0, 0, 0
to ensure compatibility
with future devices.
A12
BA0
Reserved**
13
12
** BA1, BA0 = 0, 0
to prevent Extended
Mode Register.
BA1
NOTE:
1. For full-page accesses: y = 512 (x16)
2. For a burst length of two, A1-A8 (x16) select the
block-of-two burst; A0 selects the starting column
within the block.
3. For a burst length of four, A2-A8 (x16) select the
block-of-four burst; A0-A1 select the starting
column within the block.
4. For a burst length of eight, A3-A8 (x16) select the
block-of-eight burst; A0-A2 select the starting
column within the block.
5. For a full-page burst, the full row is selected and
A0-A8 (x16) select the starting column.
6. Whenever a boundary of the block is reached
within a given sequence above, the following
access wraps within the block.
7. For a burst length of one, A0-A8 (x16) select the
unique column to be accessed, and mode register
bit M3 is ignored.
Table 1
Burst Definition
Burst
Length
Starting Column
Address
Order of Accesses Within a Burst
Type = Sequential Type = Interleaved
A0
0
1
2
0-1
1-0
0-1
1-0
A1 A0
0
0
1
1
0
1
0
1
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
4
A2 A1 A0
0
0
0
0
0
1
0
1
1
0
1
0
1
1
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Cn, Cn + 1, Cn + 2
Cn + 3, Cn + 4...
…Cn - 1,
Cn…
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
8
Full
Page
(y)
n = A0-8
Not Supported
(location 0-y)
Figure 1
Mode Register Definition
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 1.
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