參數(shù)資料
型號: MT48V16M16LFFG
廠商: Micron Technology, Inc.
英文描述: MOBILE SDRAM
中文描述: 移動SDRAM
文件頁數(shù): 19/58頁
文件大小: 1451K
代理商: MT48V16M16LFFG
19
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
Figure 11
READ to PRECHARGE
A fixed-length READ burst may be followed by, or
truncated with, a PRECHARGE command to the same
bank (provided that auto precharge was not acti-
vated), and a full-page burst may be truncated with a
PRECHARGE command to the same bank. The
PRECHARGE command should be issued
x
cycles be-
fore the clock edge at which the last desired data ele-
ment is valid, where
x
equals the CAS latency minus
one. This is shown in Figure 11 for each possible CAS
latency; data element
n
+ 3 is either the last of a burst of
four or the last desired of a longer burst. Following the
PRECHARGE command, a subsequent command to
the same bank cannot be issued until
t
RP is met. Note
that part of the row precharge time is hidden during
the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
PRECHARGE
ACTIVE
tRP
T7
NOTE:
DQM is LOW.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
PRECHARGE
ACTIVE
tRP
T7
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK
a
,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
PRECHARGE
ACTIVE
tRP
T7
BANK
a
,
ROW
or all)
(
a
DON’T CARE
X
= 0 cycles
CAS Latency = 1
X
= 1 cycle
CAS Latency = 2
CAS Latency = 3
BANK
a
,
COL
n
BANK
a
,
ROW
BANK
(
a
or all)
BANK
a
,
COL
n
BANK
a
,
ROW
BANK
(
a
or all)
X
= 2 cycles
相關(guān)PDF資料
PDF描述
MT48H16M16LFFG MOBILE SDRAM
MT49H16M18C 288Mb SIO REDUCED LATENCY(RLDRAM II)
MT49H16M18CFM-xx 288Mb SIO REDUCED LATENCY(RLDRAM II)
MT49H32M9C 288Mb SIO REDUCED LATENCY(RLDRAM II)
MT49H32M9CFM-xx 288Mb SIO REDUCED LATENCY(RLDRAM II)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48V16M32L2B5-8 IT 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA Tray
MT48V16M32L2F5-8 IT 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA Tray
MT48V32M16S2FG-10 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays
MT48V32M16S2FG-8 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk