參數(shù)資料
型號(hào)： MT48LC4M32LFFC
廠商： Micron Technology, Inc.
英文描述： SYNCHRONOUS DRAM
中文描述： 同步DRAM
文件頁(yè)數(shù)： 13/52頁(yè)
文件大?。?/td> 1281K
代理商： MT48LC4M32LFFC
13
128Mb: x32 SDRAM
128MbSDRAMx32_D.p65 – Rev. D; Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
SDRAM
Operation
BANK/ROW ACTIVATION
Before any READ or WRITE commands can be is-
sued to a bank within the SDRAM, a row in that bank
must be “opened.” This is accomplished via the AC-
TIVE command, which selects both the bank and the
row to be activated. See Figure 3.
After opening a row (issuing an ACTIVE command),
a READ or WRITE command may be issued to that row,
subject to the
t
RCD specification.
t
RCD (MIN) should
be divided by the clock period and rounded up to the
next whole number to determine the earliest clock edge
after the ACTIVE command on which a READ or WRITE
command can be issued. For example, a
t
RCD specifi-
cation of 20ns with a 125 MHz clock (8ns period) results
in 2.5 clocks, rounded to 3. This is reflected in Figure 4,
which covers any case where 2 <
t
RCD (MIN)/
t
CK - 3.
(The same procedure is used to convert other specifi-
cation limits from time units to clock cycles.)
A subsequent ACTIVE command to a different row
in the same bank can only be issued after the previous
active row has been “closed” (precharged). The mini-
mum time interval between successive ACTIVE com-
mands to the same bank is defined by
t
RC.
A subsequent ACTIVE command to another bank
can be issued while the first bank is being accessed,
which results in a reduction of total row-access over-
head. The minimum time interval between successive
ACTIVE commands to different banks is defined by
t
RRD.
Figure 4
Example: Meeting
t
RCD (MIN) When 2 <
t
RCD (MIN)/
t
CK - 3
CLK
T2
T1
T3
T0
t
COMMAND
NOP
ACTIVE
READ or
WRITE
NOP
RCD (MIN)
tRCD (MIN) = 20ns, tCK = 8ns
tRCD (MIN) x tCK
where x = number of clocks for equation to be true.
tRCD (MIN) +0.5 tCK
tCK
tCK
tCK
DON’T CARE
Figure 3
Activating a Specific Row in a
Specific Bank
CS#
WE#
CAS#
RAS#
CKE
CLK
A0-A11
ROW
ADDRESS
HIGH
BA0, BA1
BANK
ADDRESS
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