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參數(shù)資料
| 型號： | MT48H16M16LFBF-10IT |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | 8 X 9 MM, PLASTIC, VFBGA-54 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 314K |
| 代理商： | MT48H16M16LFBF-10IT |
09005aef8175ed0d/09005aef8175ed22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb Mobile SDR SDRAM_2.fm - Ver. A 11/05 EN
14
2004 Micron Technology, Inc. All rights reserved.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Electrical Specifications
Preview
Table 6:
AC Functional Characteristics
Notes 5, 6, 7, 8, 9, 11 apply to the following parameters; notes appear on page 19
Parameter
Symbol
-75
-8
-10
Units
Notes
READ/WRITE command to READ/WRITE command
tCCD
1
tCK
CKE to clock disable or power-down entry mode
tCKED
1
tCK
CKE to clock enable or power-down exit setup mode
tPED
1
tCK
DQM to input data delay
tDQD
0
tCK
DQM to data mask during WRITEs
tDQM
0
tCK
DQM to data high impedance during READs
tDQZ
2
tCK
WRITE command to input data delay
tDWD
0
tCK
Data-in to ACTIVE command
tDAL
5
tCK
Data-in to PRECHARGE command
tDPL
2
tCK
Last data-in to burst STOP command
tBDL
1
tCK
Last data-in to new READ/WRITE command
tCDL
1
tCK
Last data-in to PRECHARGE command
tRDL
2
tCK
LOAD MODE REGISTER command to ACTIVE or
REFRESH command
tMRD
2
tCK
Data-out to high impedance from PRECHARGE
command
CL = 3
tROH(3)
3
tCK
CL = 2
tROH(2)
2
tCK
CL = 1
tROH(2)
-
1
tCK
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MT48H16M16LFBF-75 | 制造商:Micron Technology Inc 功能描述:MICMT48H16M16LFBF-75 IT:G 256MB MOBILE S |
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