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參數(shù)資料
| 型號： | MT48H16M16LFBF-10IT |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | 8 X 9 MM, PLASTIC, VFBGA-54 |
| 文件頁數(shù)： | 10/20頁 |
| 文件大?。?/td> | 314K |
| 代理商： | MT48H16M16LFBF-10IT |
09005aef8175ed0d/09005aef8175ed22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb Mobile SDR SDRAM_2.fm - Ver. A 11/05 EN
18
2004 Micron Technology, Inc. All rights reserved.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Electrical Specifications
Preview
Table 10:
IDD7 - Self Refresh Current Options (x32)
Note 4 applies to the following parameters; notes appear on pages 19
Parameter/Condition
Symbol
Max
Unit
Notes
-75
-8
-10
Self refresh
CKE = LOW; tCK = tCK (MIN);
Address and control inputs are stable;
Data bus inputs are stable
Full Array, 85°C
IDD7
TBD
A
4
Full Array, 70°C
IDD7
TBD
A
4
Full Array, 45°C
IDD7
TBD
A
4
Full Array, 15°C
IDD7
TBD
A
4
Half Array, 85°C
IDD7
TBD
A
4
Half Array, 70°C
IDD7
TBD
A
4
Half Array, 45°C
IDD7
TBD
A
4
Half Array, 15°C
IDD7
TBD
A
4
1/4 Array, 85°C
IDD7
TBD
A
4
1/4 Array, 70°C
IDD7
TBD
A
4
1/4 Array, 45°C
IDD7
TBD
A
4
1/4 Array, 15°C
IDD7
TBD
A
4
1/8 Array, 85°C
IDD7
TBD
A
4
1/8 Array, 70°C
IDD7
TBD
A
4
1/8 Array, 45°C
IDD7
TBD
A
4
1/8 Array, 15°C
IDD7
TBD
A
4
1/16 Array, 85°C
IDD7
TBD
A
4
1/16 Array, 70°C
IDD7
TBD
A
4
1/16 Array, 45°C
IDD7
TBD
A
4
1/16 Array, 15°C
IDD7
TBD
A
4
Table 11:
Capacitance
Parameter
Symbol
Min
Max
Units
Input capacitance: CLK
CI1
1.5
3.0
pF
Input capacitance: All other input-only balls
CI2
1.5
3.5
pF
Input/Output capacitance: DQ
CIO
2.0
4.5
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT48H16M16LFBF-75 | 制造商:Micron Technology Inc 功能描述:MICMT48H16M16LFBF-75 IT:G 256MB MOBILE S |
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