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Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb Mobile SDR SDRAM_2.fm - Ver. A 11/05 EN
13
2004 Micron Technology, Inc. All rights reserved.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Electrical Specifications
Preview
Table 5:
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11 apply to the following parameters; notes appear on
page 19AC Characteristics
-75
-8
-10
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Units
Notes
Access time from CLK (pos. edge)
CL = 3
tAC (3)
5.4
7
ns
CL = 2
tAC (2)
6
8
ns
CL = 1
tAC (1)
-
19
22
ns
Address hold time
tAH
0.8
1
ns
Address setup time
tAS
1.5
2.0
2.5
ns
CLK high-level width
tCH
3
ns
CLK low-level width
tCL
3
ns
Clock cycle time
CL = 3
tCK (3)
7.5
8
9.6
ns
CL = 2
tCK (2)
TBD
-
TBD
-
TBD
-
ns
CL = 1
tCK (1)
-
TBD
-
ns
CKE hold time
tCKH
0.8
1
ns
CKE setup time
tCKS
1.5
2.5
ns
CS#, RAS#, CAS#, WE#, DQM hold
time
tCMH
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup
time
tCMS
1.5
2.5
ns
Data-in hold time
tDH
0.8
1
ns
Data-in setup time
tDS
1.5
2.5
ns
Data-out high impedance time
CL = 3
tHZ (3)
5.4
7
ns
CL = 2
tHZ (2)
6.5
8
ns
CL = 1
tHZ (1)
-
-19
22
ns
10
Data-out low impedance time
tLZ
1
ns
Data-out hold time (load)
tOH
2.5
ns
Data-out hold time (no load)
tOHN
1.8
ns
ACTIVE to PRECHARGE command
tRAS
45
120,000
48
120,000
50
120,000
ns
ACTIVE to ACTIVE command
period
tRC
75
80
100
ns
ACTIVE to READ or WRITE delay
tRCD
22.5
24
30
ns
Refresh period (8,192 rows)
tREF
64
ms
AUTO REFRESH period
tRFC
75
80
100
ns
PRECHARGE command period
tRP
22.5
24
30
ns
ACTIVE bank a to ACTIVE bank b
command
tRRD
15
16
20
ns
Transition time
tT
0.3
1.2
0.5
1.2
0.5
1.2
ns
WRITE recovery time
tWR (a) 1 CLK
+
7.5ns
1 CLK
+7ns
1 CLK
+5ns
tWR (m)
15
ns
Exit SELF REFRESH to ACTIVE
command
tXSR
75
80
100
ns